PCI 測定装置
米国 Stanford photo-thermal solutions社製
※当社はStanford photo-thermal solutions社のPCI測定装置の正規輸入販売代理店です。
測定対象
-
- AR・HRコート、薄膜
- レーザ結晶（Nd:YAG, Nd:YVO4, Ti:Saphire 等）
- 非線形結晶（KTP,LBO,BBO,LiNbO3, LiTaO3, 分極反転素子 等）
- コンポジット材料（接合デバイス, 液晶セル 等）
- 半導体
- 液体/気体サンプル
Specifications
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Probe laser
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Low noise class IIIa He-Ne
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|
Probe wavelength
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633 nm
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Pump/probe crossing angle
|
0.1 rad
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Pump chopping frequency range
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200-800 Hz
|
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Sensitivity to bulk absorption
(minimum absorbed pump power per 1cm length) |
1 µW*, CW or average
|
| Sensitivity to surface absorption (minimum absorbed pump power) |
0.1 µW*, CW or average
|
|
Transverse resolution in space
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60 µm
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Longitudinal resolution in space
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0.6 mm*
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Resolution in time
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from 0.01 sec
|
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Precision for relative measurements of absorption
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<5%
|
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Lock-in amplifier type
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dual-phase
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Nnumber of photodetectors
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1
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* approximate number (depends on the type of tested optical material)